Transforming a Ion-Cut Silicon Layer From Damage-Dense to Defect-Free Status <I>Via</I> Microwave-Anneal and Recrystallization

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Transforming a Ion-Cut Silicon Layer From Damage-Dense to Defect-Free Status Via Microwave-Anneal and Recrystallization

Wednesday, October 30, 2013

Grand Ballroom, Tower 2, Grand Ballroom Level (Hilton San Francisco Union Square)

C. -C. Ho , Dept. of Mechanical Engineering, National Central University

C. -H. Huang, Ph. D. , Dept. of Mechanical Engineering, National Central University

F. S. Lo, Ph. D. , Dept. of Mechanical Engineering, National Central University

Y. -L. Chang , Dept. of Mechanical Engineering, National Central University

G. -C. Huang , Dept. of Mechanical Engineering, National Central University

T. -H. Lee, Ph.D. , Dept. of Mechanical Engineering, National Central University, Chung-Li City, Taiwan

Abstract: