224th ECS Meeting (October 27 – November 1, 2013)

October 27 - November 01, 2013

Synthesis and Electrochemical Characterizaction of TiO2 Materials
Ivan Erick Castañeda, Dr., CIICAp; Jorge Uruchurtu Uruchurtu, Dr., CIICAp

Parameters and Underlying Mechanisms Affecting the Morphology of Bifurcating TiO₂ Nanotube
Darren J. LeClere, Toyohashi University of Technology; Adrian Ashari, Toyohashi University of Technology; Go Kawamura, Toyohashi University of Technology; Hiroyuki Muto, Toyohashi University of Technology; Atsunori Matsuda, Toyohashi University of Technology

TiO2 Nanotubes and Mesosponges: Modification Approaches to a Strongly Enhanced Water Splitting Activity
P. Schmuki, PhD, University of Erlangen-Nuremberg (FAU)

TiO₂-WO₃ Nanotubular Composite Synthesized By Anoidzation of Simultaneous Multi-Target Sputtered Thin Films Characterized By Laser Ablation ICP-MS
York R. Smith, University of Utah; Karumbaiah N. Chappanda, University of Utah; Swomitra K. Mohanty, University of Utah; Mano Misra, University of Utah

Stability of Photoactive Oxide Semiconductors
Dev Chidambaram, Materials Science and Engineering Department, University of Nevada Reno; Ruchi Gakhar, Materials Science and Engineering Department, University of Nevada Reno

Break

Investigating Surfaces By Complimentary Chemical Spectroscopies
Gary P. Halada, Ph.D., Stony Brook University

Growth and Characterization of Tubular Oxide Layers On Ti Substrates
Hiroaki Tsuchiya, PhD, Osaka University; Shota Yamamoto, Osaka University; Shinji Fujimoto, Dr. Eng., Osaka University

Porous Anodic Oxide Films Grown On Compound Semiconductor
Sachiko Ono, PhD, Department of Applied Chemistry, Kogakuin University; Kosuke Sugawara, Graduate student, Kogakuin University; Hidetaka Asoh, PhD, Department of Applied Chemistry, Kogakuin University

Evaluation of Corrosion Resistance of Multilayered Sn/Ag₃sn Electroplating On Cu Alloys for Electric Connectors
Song-Zhu CHU, Iwate University; Hitoshi Yashiro, Iwate University

Electrical Stability Enhancement of the Thin Filmtransistor With the Back-Channel Deposited By Cosputteringamorphous In-Ga-Zn-O and Siox (Cancelled)