Sample Preparation Method to Measure Strain of P-Channel with Esige by Nano Beam Diffraction
As a result, we could obtain very stable strain variation ±0.1% at unstrained silicon(Si) region.
We also found that damaged layer caused by focused ion beam (FIB) milling process have a crucial role
in the NBD measurement.
Thus, low energy FIB milling condition was optimized for reducing surface damaged layer of the
specimen. We have found the best sample conditions, thickness above 260nm and low energy FIB milling
for sample preparation.
III. RESULTS AND DISCUSSIONS
3.1 Strain relaxation on sample thickness
3.2 Strain sensitivity related to damaged layer
3.3 Strain profile at p-channel with eSiGe