Structure and Synthesis of Bi2S3 Nanocrystals for Thermoelectric Device

Tuesday, 7 October 2014
Expo Center, 1st Floor, Center and Right Foyers (Moon Palace Resort)
Y. J. Hsiao (National Nano Device Laboratories, National Applied Research Laboratories), T. H. Fang (National Kaohsiung University of Applied Sciences (KUAS)), C. D. Wu (Chung Yuan Christian University), S. H. Wang, and B. Y. Yang (KUAS)
Characteristics and microstructure of bismuth sulfide (Bi2S3) produced by the microwave hydrothermal process are investigated. Bismuth sulfide is a direct band gap material with Eg ~ 1.3 eV and attracts high interest in thermoelectric application. In this work, bismuth sulfide nanostructures can be successfully prepared by a precipitation between bismuth 2-ethylhexanoate and thioacetamide in low-temperature organic solution at about 150 oC by the microwave hydrothermal process. The Bi2S3 products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and absorption spectra. The composite ratio between Bi and S can be adjusted by varying the ratio between two precursors and was determined by using EDS technique. Thermoelectric properties of the Bi2S3will be studied comparatively with those from commercial bulk materials.