Investigation of Electrical Characterization of Hetero-Junctions Formed by RF Sputtered Indium Tin Oxide on Silicon
In this work, we study the electrical properties of ITO-Si hetero-junctions prepared under various deposition parameters. For this investigation, we fabricate ITO-Si hetero-junctions by RF sputtering of ITO (90% In2O3 and 10% SnO2) target. Interestingly, ITO-Si hetero-junctions can be formed on both n- and p- type Si. The studies are performed on both hetero-junction devices of ITO sputtered on n- and p- type Si wafers and characterized.
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