Study of 1/f Noise in Graphene Based Field-Effect-Transistors

Novel two-dimensional semiconducting nanomaterials have attracted tremendous interest due to their unique structure and properties. Different from the traditional silicon-based semiconductor, two-dimensional nanomaterials have a thickness as thin as a single atomic layer; their electrical properties are influenced by many factors, and the mechanism of their 1/f noise becomes more complicated. In this study, two-dimensional nanomaterials, such as graphene and its nanoribbons are chosen as the channel materials of field-effect-transistors (FETs). A systematic investigation was performed on the low frequency 1/f noise behaviors in these devices under different variability factors, such as surrounding environment and device structures (including channel thickness, width and edge structure of channels). The physical mechanisms of the 1/f noise will be analyzed. This study should help us to understand the basic 1/f generation mechanism in low-dimensional nanomaterials, and to provide critical rules for better design of low-dimensional semiconducting devices.