Synthesis of Ruthenium Complexes for Semiconductor Device Using Atomic Layer Deposition
A recent investigation reported that the nucleation of ALD-Ru film was enhanced considerably by using a zero-valent metallorganic precursor, compared to the utilization of precursors with higher metal valences.
In this presentation study, we will display our research results on the synthesis and characterization of novel ruthenium complexes. The ruthenium compounds were easy synthesized by the reaction of ruthenium halide with appropriate organic ligands in protic solvent, and characterized by NMR, elemental analysis and thermogravimetric analysis.
ALD of Ru film was demonstrated using the new (zero-valent) Ru metallorganic precursor and O2 as the Ru source and reactant, respectively, at the deposition temperatures of 300-350oC. Self-limited reaction behavior was observed as increasing Ru precursor and O2 pulse time, suggesting that newly developed Ru precursor is applicable for ALD process. Detailed discussions on the chemical and structural properties of Ru thin films as well as its growth behavior using new Ru precursor will be also presented.