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Boron-Doped Reduced Graphene Oxide (B-RGO) and Its Application to L-Cysteine Sensing
In the electron energy loss spectroscopy (Fig. 1 (a)), the peaks of π*(~190 eV) and σ*(~200 eV) anti-bonding orbitals on the K-edge of boron (B) revealed the hybridized sp2-bonded B atoms in the graphene nanosheet. These two peaks indicates that the substitution doping is the dominate type of doping. The STEM-EELS mapping of B-RGO (Fig. 1 (b)) confirms that dopant B (green) is uniformly distributed on the reduced graphene oxide.
Electrochemical characterization shows different performances among bare SPCE, RGO/SPCE and B-RGO/SPCE in Fig. 1(c). The results show that with the help of boron, B-RGO (B=9.6%) possesses good electrocatalytic ability to L-cys by decreasing the overpotential and increasing the current density of the irreversible oxidation reaction. Fig. 1(d) shows a plot of the current density of the B-RGO/SPCE as a function time at various L-cys concentrations. The current density increases linearly with the increased L-cys concentration, as shown in the inset. The sensitivity of the B-RGO/SPCE is 20.7 mAcm−2M−1. The limit of detection (LOD), based on a signal-to-noise ratio of 3, for the B-RGO/SPCE is 0.07 μM.
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