Electrodeposited Sb- Doped ZnO Nanorod Arrays and Electrical Characterization Based on Single Nanorod Field Effect Transistors
Zn(NO3)2 and hexamine mixed solution were used as a precursor. The morphology, composition
and crystallinity of nanorods were characterized using a field emission scanning electron microscope,
energy dispersive X-ray spectroscopy and X-ray diffraction, respectively. The transmitted spectrum
was used to investigate optical properties of Sb-doped ZnO arrays. Single Sb-doped ZnO nanorod field effect transistors were constructed via standard photolithography process.
The dependence of nanorod resistance on the temperature from 5K to 300K and the current
versus voltage curve of the field effect transistor at different temperature from 100K to 300K were measured.