Devices and Circuits

Thursday, 28 May 2015: 10:40-12:00
Williford Room B (Hilton Chicago)
Chairs:
Jean-Pierre Raskin and Joao Antonio Martino
10:40
FDSOI Suitability for Asynchronous Circuits at Sub-VT
E. Amat, J. F. Christmann, O. Billoint, I. Miro, and E. Beigne (CEA-LETI)
11:00
Proton Radiation Effects on the Analog Performance of Bulk n- and p-FinFETs
M. Bertoldo, A. V. D. Oliveira, P. G. D. Agopian (University of Sao Paulo), E. Simoen (imec), C. Claeys (KU Leuven, imec), and J. A. Martino (University of Sao Paulo)
11:20
Comparison of Current Mirrors Designed with TFET or FinFET Devices for Different Dimensions and Temperatures
M. D. V. Martino, J. A. Martino, P. G. D. Agopian (University of Sao Paulo), A. Vandooren, R. Rooyackers, E. Simoen, A. Thean (Imec), and C. Claeys (KU Leuven, Imec)
11:40
Impact of Gate Stack Dielectric on Intrinsic Voltage Gain and Low Frequency Noise in Ge pMOSFETs
A. V. D. Oliveira, P. G. D. Agopian, J. A. Martino (University of Sao Paulo), W. Fang, H. Arimura, J. Mitard (Imec), H. Mertens, E. Simoen (imec), A. Mocuta, N. Collaert, A. Thean (Imec), and C. Claeys (KU Leuven, Imec)