Compound Semiconductor Growth

Monday, 25 May 2015: 13:00-16:30
Conference Room 4G (Hilton Chicago)
Chair:
Jennifer K Hite
13:00
Invited: Approaches to the Formation and Integration of Large Lattice Mismatched Materials: Metamorphic and Non-Conventional 'buffer' Layers
T. F. Kuech, S. E. Babcock, L. J. Mawst, A. Wood, T. W. Kim, A. Rajeev, K. Schulte, and Y. Guan (University of Wisconsin - Madison)
13:30
(Invited) Growth of Non-Polar Cubic GaN on Common Si
M. Durniak, A. Bross, D. Elsaesser (Rensselaer Polytechnic Institute), A. Chaudhuri, S. C. Lee, S. R. J. Brueck (University of New Mexico, Albuquerque), and C. Wetzel (Rensselaer Polytechnic Institute)
14:00
Ag-Fe2O3 Heterostructured Nanoparticles as Photocatalysts under Visible Light Irradiation
S. Liu, Y. Chen (Qingdao University of Science and Technology), and L. Dong (Qingdao University of Science and Technology, Missouri State University)
14:20
The Effect of Interfacial Contamination on Antiphase Domain Boundary Formation in GaAs on Si(100)
C. S. C. Barrett, A. G. Lind (University of Florida), X. Bao, Z. Ye, K. Y. Ban, P. Martin, E. Sanchez (Applied Materials), and K. S. Jones (University of Florida)
14:40
Break
14:50
15:20
Continuum Modelling of Silicon Diffusion and Activation in in0.53Ga0.47As
H. L. Aldridge Jr., A. G. Lind, M. E. Law (University of Florida), C. Hatem (Applied Materials), and K. S. Jones (University of Florida)
15:40
Atomic Level Simulation of Ridge Reconstruction and Passivation in GaAs Nanopillars
T. H. Yu (California State University, Long Beach) and C. Ratsch (University of California, Los Angeles)
16:00
(Invited) The Effect of Thermally Induced Piezoelectricity on GaN HEMT Device Characteristics
J. Sengupta, P. McCluskey, and S. Khanna (University of Maryland, College Park)