Nickel was deposited on Cu2O films from a 0.08 M nickel acetate solution by applying various potentials for 1 min at room temperature. The Cu2O films with nickel deposited were dissolved in HNO3, and then the quantities of the deposited nickel at the various potentials were determined with atomic absorption spectrometry (AAS). The AAS results indicate that the underpotential deposition at -0.2 V vs. SCE (the calculated Nernst potential of the nickel solution is -0.49 V vs. SCE) deposited nickel that is equivalent to a 23 % monolayer coverage, corresponding to 60 kJ stronger interaction of Ni2+(aq) with O2- at Cu2O surface than with bulk Ni surface, as predicted for the polar Cu2O (111) face. For the estimate of the 100 % coverage of Cu2O surface, the atomic radius of Ni (124 pm) was used as well as the surface roughness of 1.09 obtained by atomic force microscopy measurements. At -0.3 V vs. SCE, more than a monolayer of nickel (205 %) was deposited.
According to the x-ray photoelectron spectroscopy (XPS), the binding energy (BE) of Ni 2p3/2 electron changed from 855 eV for -0.2 V vs. SCE UPD sample to 851 eV for -0.3 V vs. SCE UPD sample. Since the BEs of 854.6 eV and 852.6 eV have been assigned for Ni2+ and Ni0, respectively, the XPS data indicate that the full reduction of nickel at the Cu2O surface occurs at potentials more negative than -0.2 V vs. SCE.
The effects of underpotentially deposited nickel on the activity and stability of Cu2O films will be compared with respect to the deposition potential.