Controlled fabrication of Si nanocrystals via the SiO_x/SiO₂ superlattice approach enables size control as well as density control [1]. The resulting layer arranged Si nanocrystals represent a model system to systematically study photonic and electronic properties of indirect gap quantum dots. Hence a deeper understanding can be developed for absorption, recombination, carrier kinetics and transport. As example, the temperature dependence of confined excitons in Si quantum dots and their respective temperature depending band gap will be analyzed for different sizes and will be compared with theory prediction. [2] The interplay of radiative and non-radiative recombination will be studied using recombination kinetics based on detailed time resolved measurements. [3] In addition, the origin of the luminescence in Si₂N₃embedded Si NCs are discussed. [4] Transport properties will be evaluated as a function of NCs size and distance. [5] Finally, systematic doping experiments with P will be analyzed for doping efficiency, in-cooperation into the Si NCs and self-purification, and electronic transport. [6, 7]

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[4] A. Zelinina et al. J. Appl. Phys. 114 (2013) 184311.

[5] S. Gutsch et al. J. Appl. Phys. 113 (2013) 133703.

[6] H. Gnaser et al. J. Appl. Phys.113 (2013) 034304

[7] S. Gutsch et al. Appl. Phys. Lett. 106 (2015) 113103.