The influence of zinc (Zn) impurities at different concentrations on the properties of antimony sulphide (Sb₂S₃) thin films grown using the solution growth technique is reported. The films were grown at room temperature of 28^oC,  a deposition time of  2 h, and an initial pH of 4.40. The films were then doped with different concentrations of Zinc impurities (0.25 -1.0M) and then annealed at annealing  temperatures  ≤ 400 ^oC. The films were characterised using optical spectroscopy and Fourier transform infrared spectroscopy (FTIR)  to investigate the transmittance, absorbance and reflectance versus wavelength measurements, X-ray diffractometry (XRD) to study the structural properties, Scanning electron microscopy (SEM) to investigate  the morphological properties, and Rutherford Backscattering (RBS) techniques for the compositional analysis.  The results indicate that the film thickness was in the range 0.3 -1.5μm, with an increase in the film thicknesses of the doped layers compared to the as-deposited films.  The transmittances of the doped layers were found to be reduced compared to the as-deposited films. The results of the optical analysis show that the films had direct energy band gap with optical absorption coefficient (α) > 10⁴ cm^-1 in both the doped and as-grown  layers. The refractive index was typically ≤ 3.6, with higher values obtained from the doped layers. The values of the energy band gap were in the range suitable for application in solar photovoltaic and photonic devices.