Tin dioxide (SnO₂) nanowires grow by the thermal vapor deposition method. Vapor-liquid-solid method grows nanowires to product uniform nanowire’s diameter, because this method can control nanowire’s diameter. There are many parameters to affect the nanowire’s growth. These parameters are temperature (source area), flow rate, pressure, source mass, grow time, distance between the source and growth area and the thickness of gold films. The purpose of this study is to find the relationship between the nanowire’s growth and these parameters. Also, by using these parameters to grow the nanowires with specific size of diameter and length.

We find the suitable condition to grow the nanowires and the relationship between growth condition and effect of parameters. This condition grows nanowires is controllable and can be reproduced. In SEM images, it shows the straight nanowires with uniform diameter is 60~120 nm. Here, we discuss the effect of the temperature (source area), flow rate, pressure, source mass…etc. The temperature influences the precursor’s vapor pressure: when the temperature is high, the vapor pressure will be increased and will be caused nanowire to be dense. Similarly, precursor’s mass also affects the density of NWs. Because more precursor will supply more vapor at the moment, it let the density to increase. The growth time is the parameter to control the nanowire’s length when it supplies enough precursor. Pressure, gas flow rate and distance which determine the nanowires grow or not. Nanowires will grow only at the suitable environment. The thick of gold film which controls the nanowire’s diameter, because we grow the nanowires by VLS mechanism. In this study, we can get the specific SnO₂ nanowires by tuning growth parameters, such as length, diameter, density ...etc. So it’s possible to support the suitable SnO₂ nanowires to make the semiconductor devices.