The isolation of graphene constituted a new paradigm in next generation electronic technologies. In this work, I will discuss recent works in graphene and beyond for novel device applications. This includes a focus on epitaxial graphene materials and device properties, as well as “beyond graphene” opportunities that could lead to new areas of research.  Transition metal dichalcogenides (TMDs) and their heterostructures could have an even greater impact on next generation technologies. Molybdenum disulfide (MoS₂) is currently a leading TMD for scientific exploration, but there are a variety of other suitable, less explored, TMDs and heterostructures that exhibit very attractive bandgaps, charge carrier effective masses, and mobilities for electronic applications. Transition-metal dichalcogenides (TMDs) in the form of MeX₂ (where Me = a transition metal such as Mo, W, Ti, Nb, etc. and X = S, Se, or Te) also exhibit extreme flexibility, possession of tunable band gaps, modest electron mobilities, and wide variety of band-offsets. Additionally, monochalcogenides (i.e. GaSe) have the potential to provide routes toward alternative wide bandgap 2D materials suitable for high power and UV optoelectronics. Furthermore, synthesizing and heterogeneously combining these atomic layered materials to form van der Waals (vdW) solids, where each layer may be different from the previous, is a powerful way to develop novel nanoscale materials.  This talk will elaborate on recent breakthroughs for direct growth of two-dimensional atomic heterostructures (MoS₂, WSe₂, and hBN) on a graphene template, discuss recent breakthroughs in the synthesis of 2D nitrides beyond hBN, and elucidate mechanisms for achieving selective area growth of 2D materials.