A library of dicationic bismuth–halide materials has been investigated to determine optimal dicationic groups based on film quality, optical band gap, and current density versus potential (J–E) characteristics. XRD data of dicationic bismuth–halide thin films have suggested larger average crystal grain size than MAPbI3 thin films and SEM images of dicationic bismuth–halide thin films have indicated greater surface coverage than MAPbI3 thin films. UV–Vis absorption spectra of dicationic bismuth–halide thin films have revealed onsets of light absorption in the range of 565 nm to 620 nm, which correspond to optical band gaps between 2.2 and 2.0 eV. J–E measurements have indicated that dicationic bismuth–halide photovoltaic devices exhibit a photovoltage of almost 400 mV (Fig. 1). Thermal stability tests suggest that dicationic bismuth–halide thin films are significantly more robust than MAPbI3 thin films. Large single crystals have been obtained for a dicationic bismuth–halide material, and single-crystal XRD data have indicated that the material formed binuclear clusters of Bi2I104-, with two dicationic organic groups and two H2O molecules associated with each binuclear cluster. To my knowledge, this represents the first report of a crystal structure of this material. Efficient photovoltaic devices featuring a dicationic bismuth–halide material may offer a more environmentally friendly, stable alternative to MAPbI3 photovoltaic devices that currently dominate emerging photovoltaic technology research.