In-situ doping of Eu3+ions in silicon oxides and oxynitrides fabricated by electron-cyclotron-resonance plasma enhanced chemical vapour deposition (ECR-PECVD) is performed. Doping is achieved by using a Circular High Vacuum Magnetron sputtering source attached to the ECR-PECVD tool. The doping concentration is varied by varying the distance of the sputtering source to the target. The hot matrix composition is varied through varying oxygen and nitrogen gas flows. The effects on the doping concentrations of the sputtering source distance to target is determined through Rutherford Backscattering Spectrometry and Variable Angle Spectroscopic Ellipsometry. Preliminary luminescence measurements are discussed.
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