Deformable field-effect transistors (FETs) are expected to facilitate new technologies like stretchable displays, conformal devices, and electronic skins. Thin film percolating networks of electronic-type controlled semiconducting carbon nanotubes are highly intriguing options for the active channel of stretchable FETs due to the excellent mechanical resilience of individual nanotubes, their possibility to accommodate large strain in thin film form via nanotube–nanotube sliding and buckling, and their exceptional charge transport properties. We demonstrate stretchable FETs based on buckled thin films of polyfluorene-wrapped semiconducting single-walled carbon nanotubes as the channel, buckled metal films as electrodes, and unbuckled flexible ion gel films as the dielectric.[1] The buckled thin film morphology is induced by depositing the nanotubes onto a pre-strained polydimethylsiloxane (PDMS) substrate and then releasing it, greatly improving the device stretchability. The FETs are stretchable up to 50% without appreciable degradation in performance before failure of the ion gel film. We furthermore show that by buckling the ion gel, the integrity and performance of the nanotube FETs are extended to nearly 90% elongation, limited by the stretchability of the elastomer substrate.[2] The FETs maintain an on/off ratio of >10⁴ and a field-effect mobility of 5 cm² V⁻¹ s⁻¹ under elongation and demonstrate invariant performance over 1000 stretching cycles.

[1] Xu F, Wu M-Y, Safron NS, Singha Roy S, Jacobberger RM, Bindl DJ, Seo J-H, Chang T-H, Ma Z, Arnold MS, Highly Stretchable Carbon Nanotube Transistors with Ion Gel Gate Dielectrics, NANO LETTERS, 4 (2), pp 682–686 (2014).

[2] Wu M-Y, Zhao J, Xu F, Chang T-H, Jacobberger RM, Ma Z, Arnold MS, Highly Stretchable Carbon Nanotube Transistors Enabled by Buckled Ion Gel Gate Dielectrics, APPLIED PHYSICS LETTERS, 107, 053301 (2015).