With the increasing demand of high performance technology, the necessity to improve the mechanics of electronic devices is becoming of great importance. This requires atomic level planarization to avoid defects on the surface of integrated circuits (IC) and hard disk drive (HDD) media through CMP by removing the metal complex film formed. Traditional CMP systems incorporate a synergistic interaction between slurry chemistry and various mechanical parameters to achieve high surface quality while ensuring surface planarity. In order to understand this relationship, it is necessary to probe the film forming capabilities of oxidizers, complexing agents, and corrosion inhibitors on the substrate surface. The changes and dissolution of the film formed on the surface will be analyzed through the comparison of activation energy and Open Circuit Potential (OCP).  More specifically, the separate molecular interaction of Benzotriazole (BTA) and Salicylhydroxamic Acid (SHA), and the substrate will be studied through the quantization of activation energy.  The difference in the surface quality of the substrate, dependent on the film formation mechanism, will be understood through Atomic Force Microscopy (AFM). This work aims to show how the use of electrochemical techniques and surface spectroscopy can be useful in understanding the underlying mechanism of film formation on Cu and NiP substrates. Previous studies have shown promise that the use of various additives plays an intricate role on the films formed, relying heavily on the metal substrate used.