There is an increased interest in very high dielectric constant (high-k) material studies due to their potential applications in energy storage elements. In this aspect, the perovskite materials seem to achieve very high-k values [1]. In this study, the focus has been to deposit thin films of CaCu₃Ti₄O₁₂. These films are deposited by RF magnetron sputtering process using CaCu₃Ti₄O₁₂target. The films are deposited under varies deposition conditions that include argon gas flow ratios, process pressures and RF power. Metal–insulator–metal (MIM) structures have been fabricated using aluminum film as the electrodes. The electrical properties of the films have been characterized and reported as a function of deposition parameters for the above MIM structures.

REFERENCE:

[1] M.A. Subramanian, Dong Li, N. Duan, B.A. Reisner, A.W. Sleight, High Dielectric Constant in ACu₃ Ti₄ O₁₂ and ACu₃ Ti₃ FeO₁₂ Phases