2D metallic conductivity on ZnO has not been previously demonstrated in experiments. The charge transport properties of 2D surfaces have proved to be difficult to measure because of the dominant effect of bottom, bulk conduction channels. In our study, we reduce the ZnO thickness to several nanometer to suppress the bulk conduction channels and first experimentally show 2D metallic states on polar ZnO surfaces through surface conductivity measurements on SiO2 substrates. Then, introduction of a high density of oxygen vacancies to the polar ZnO surfaces can cause metal to semiconductor transition. These experimental results are also confirmed by the first principle calculations.
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