Control of the amounts of exposed edge sites of molybdenum disulfide (MoS₂) is the key to develop the efficient catalyst for hydrogen evolution reaction (HER).  Atomic layer deposition (ALD) method has been well-known for conformal coating of desired materials. However, application of ALD to control the amount of edge site of MoS₂ remains exclusive. Here, we demonstrate that ALD was successfully applied to grow MoS₂ films together with control the amount of edge sites and high porous morphology. Our data show that the non-ideal mode of ALD growth on planar surfaces could be used in controlling the relative fractions of active-edge sites of MoS₂.  In addition, the effect of amount of edge sites to the Tafel slopes and current densities in HER performance was also investigated. We achieved the best catalytic performance of the current densities up to 20 mA cm^-2 at -0.3 V versus reversible hydrogen electrode, Tafel slope of 50 to 60 mV/decade, and onset potential of 143 mV vs RHE. Our results are indicative for the first time that ALD approach is a potential strategy in designing HER materials.