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(Invited) Chalcopyrites and III-V Semiconductors for Solar Water Splitting--a Detailed Look at the Electronic and Chemical Surface Structure

Thursday, 2 June 2016: 08:40
Sapphire Ballroom I (Hilton San Diego Bayfront)
C. Heske (Karlsruhe Institute of Technology, University of Nevada Las Vegas) and M. Blum (University of Nevada Las Vegas)
This presentation will discuss the chemical and electronic surface properties of Cu(In,Ga)(S,Se)2- and GaInP2-based materials in view of their use in solar water-splitting devices. Many of the primary requirements for photoelectrochemistry (such as efficiency and stability) are directly related to such properties, but it is generally quite difficult to paint a comprehensive surface picture, in particular in operando environments.

The talk will focus on results obtained with a tool chest of soft x-ray and electron spectroscopies, with primary emphasis on high-brilliance synchrotron radiation experiments. It will be shown how photoelectron spectroscopy (PES), also under “ambient pressure” conditions, inverse photoemission (IPES), x-ray emission spectroscopy (XES), and x-ray absorption spectroscopy (XAS) can be suitably combined to derive surface electronic band gaps, study local chemical bonding and electronic level alignment, and gain insights into chemical stability.