As a solution to the above problems, we will present the synthesis of Ta-doped TiO2 (TTO) as a TCO substrate via atomic layer deposition (ALD) which we found to be stable in reducing atmospheres. ALD was also used to directly deposit thin films of Ta3N5 on TTO. While initial attempts produced as-deposited films are primarily amorphous TaOxNy, these films can be nitridized to Ta3N5 at far more moderate conditions compared to all previous reports and ALD–deposited tantalum oxide analogue films. The photoelectrochemical properties of the TTO/Ta3N5 films were investigated and the PEC water oxidation performance was analyzed. The excellent material control reported here allowed for a detailed material structure – function relationship to be determined and a path to improved performance elucidated. Initial results of a modified procedure, including ALD precursor and temperature variations, which allowed the direct synthesis of crystalline Ta3N5 on TTO substrates, will also be presented.