Tuesday, 31 May 2016
Exhibit Hall H (San Diego Convention Center)
A. Prakash (University of Central Florida) and K. B. Sundaram (Univ. of Central Florida)
The ever increasing advancements in semiconductor technology and continuous scaling of CMOS devices mandate the need for new dielectric materials with low-k values. The interconnect delay can be reduced not only by the resistance of the conductor but also by decreasing the capacitance of dielectric layer. Also cross-talk is a major issue faced by semiconductor industry due to high value of k of the inter-dielectric layer (IDL) in a multilevel wiring scheme in Si ultra large scale integrated circuit (ULSI) devices. Recently it has been found that Boron Nitride (BN) films can achieve low-k values around and hardness comparable to diamond [1][2]. BN is hygroscopic in nature. In this respect carbon can be added to the BN structure to produce Boron Carbon Nitride (BCN) films as the possible substitute for BN. The minimum dielectric constant achieved by plasma assisted chemical vapor deposition for a BCN thin film was reported to be 1.9. [2] The BCN films are also instrumental in suppressing the Cu migration [3]. The Young’s modulus of BCN films are reported well above 20 GPa making it one of the suitable options for low-k materials [4].
In the present work, BCN films were deposited by dual target sputtering of boron carbide (BC) target (DC), boron nitride (BN) target (RF) in nitrogen ambient with argon. The films were deposited under various N2/Ar gas flow ratios and temperature. BCN is etched using an etchant that consists of 16 parts of Phosphoric acid (H3PO4), 1 part of Nitric acid (HNO3), 1 part of Acetic acid (CH3COOH), 20 parts of DI water. Various plots of etch rates with respect to deposition parameters and Arrhenius plots are studied.
REFERENCES
[1] Jun Liu, Kian Ping Loh, Ming Lin, Yong Lim Foo, Wei De Wang, and Dong Zhi Ch, Journal of Applied Physics, 96 (2004) 6679.
[2] Riedel R., Advanced Materials, 4 (1992) 759.
[3] M. K Mazumder, R. Moriyama, D. Watanabe, C. Kimura, H. Aoki, and T. Sugino: Jpn. J. Appl. Phys. 46 (2007) 2006.
[4] C. Morant, D. Caceres, J. M. Sanz, and E. Elizalde: Diamond Relat. Mater. 16 (2007) 1441.
