Nitride Devices II

Tuesday, 31 May 2016: 08:00-11:10
Aqua 310 B (Hilton San Diego Bayfront)
Chair:
Ramon Collazo
08:00
1223
(Invited) Recent Progress in GaN Power Devices with BV > 1200 V
H. G. Xing, K. Nomoto, Z. Hu (Cornell University), B. Song (cornell University), M. Zhu, and D. Jena (Cornell University)
 
1224
GaN Based Vertical Transistors on GaN Substrates (Cancelled)
 
1225
High Performance AlGaN/GaN Hemts on GaN Substrates (Cancelled)
09:10
1226
(Invited) Room Temperature Spin Electronic Devices Based on Mn and Cr Doped GaN
N. A. El-Masry (National Science Foundation) and S. M. Bedair (North Carolina State University)
09:40
Break
10:00
1227
(Invited) Electric-Double-Layer-Gated AlGaN/GaN High Electron Mobility Transistors (HEMTs) for Biosensors
C. H. Chu, I. Sarangadharan, A. Regmi, Y. W. Chen, C. P. Hsu, and Y. L. Wang (National Tsing Hua University)
10:30
1228
(Invited) Improved GaN Based Hydrogen Sensors
K. H. Baik (Hongik University), J. Kim (Dankook Univsersity), and S. Jang (Dankook University)
11:00
Break
See more of: H01: Wide Bandgap Semiconductor Materials and Devices 17
See more of: Electronic and Photonic Devices and Systems
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