Oxides II

Wednesday, 1 June 2016: 09:50-12:00
Aqua 310 B (Hilton San Diego Bayfront)
Chair:
Vidhya Chakrapani
09:50
1246
Effect of Light Intensity and Wavelength on a-Ingazno Thin Film Transistors Under Negative Bias Illumination Stress
W. S. Kim, Y. H. Lee, Y. J. Cho (POSTECH), B. K. Kim, K. T. Park (LG Display), and O. Kim (POSTECH)
10:10
1247
Mechanism of Hump Phenomenon in the I-V Characteristics of Amorphous in-Ga-Zn-O Thin Film Transistors Under Positive Bias and Illumination Stress
Y. J. Cho, Y. H. Lee, W. S. Kim (POSTECH), B. K. Kim, K. T. Park (LG Display), and O. Kim (POSTECH)
10:30
1248
Effect of the Deposition Temperature and Thermal-Annealing on the I-V Characteristics of Low-Temperature-Processed Polycrystalline ZnO and Amorphous InGaZnO TFTs
A. Tari and W. S. Wong (University of Waterloo)
10:50
Break
11:00
1249
Channel Scaling Behavior of Amorphous In-Zn-O Thin Film Transistors with High Mobility over 35 cm2/Vsec
S. Lee (Baylor University) and D. C. Paine (Brown University)
11:20
1250
Investigation on Alumina Passivation for Improved IGZO TFT Performance
T. Mudgal, N. Edwards, P. Ganesh, A. Bharadwaj (Rochester Institute of Technology), R. G. Manley (Corning Incorporated), and K. D. Hirschman (Rochester Institute of Technology)
 
1251
Ultra-Small ZnO Nanoparticles for Charge Storage in MOS-Memory Devices (Cancelled)
See more of: H01: Wide Bandgap Semiconductor Materials and Devices 17
See more of: Electronic and Photonic Devices and Systems
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