Here, a 2D InSe-based tribotronic transistor that integrates an In-doped InSe transistor and a tribotronic nanogenerator is demonstrated. The In-doped InSe transistor can be gated by the electrostatic potential generated by contacting and separating two frictional layers of Kapton and silicone rubber and ideal logic operations can be realized through tactile sensing. Based on our design, the current of the transistor is effectively modulated from about 10⁻¹¹ A to 10⁻⁵ A at a very low drain–source voltage of 0.1 V. The ultrahigh switching ratio (I_on/I_off) modulation of up to 10⁶ at an extraordinarily low driving voltage (V_ds= 0.1 V), which is 10⁵ times higher than that of previously reported MoS₂-based tribotronics (V_ds= 1 V, I_on/I_off=16). Further, the 2D InSe triboelectric is used as a tactile sensor to control optoelectric devices and to implement the visible Morse codes. The repeatability and durability of the 2D InSe triboelectric with I_on/I_off ˃10⁵ are measured for 1000 cycles. Consequently, combined with in-depth consideration of the working principles, it is believed that tribotronic transistors combining basic of 2D-material FETs and TENGs are suitable for applications that need low voltage, low power consumption, and high signal resolution. This research lays a foundation for the use of 2D triboelectronics in next-generation human machine interactions and flexible tactile sensors.

[Ref] Y. C. Lai, et. al. Advanced Functional Materials, 2019, 1809119.