(Invited) Mid-Infrared Colloidal Quantum Dot Based Nanoelectronics and Nano-Optoelectronics

Monday, 14 October 2019: 10:30
Room 208 (The Hilton Atlanta)
S. B. Hafiz (New Jersey Institute of Technology), M. R. Scimeca, A. Sahu (New York University), and D. K. Ko (New Jersey Institute of Technology)
Electronic and optoelectronic devices fabricated from colloidal quantum dots (CQD) provide a promising path toward realizing low-cost devices with greatly simplified device fabrication procedure, owing to their solution-processability. The impact that CQD technology would bring is expected to be significant, especially in the mid-infrared application areas, which is currently dominated by epitaxial semiconductor technologies. In this work, we introduce a new generation of infrared CQDs, namely Ag2Se CQDs, which has been recently uncovered to show distinct optical absorption in the mid-infrared. We report on the fabrication of solution-processed photoconductive photodetectors and discuss our analyses on the electronic and optoelectronic characteristics of our devices. We also demonstrate the feasibility of mid-infrared photodetection with a measured peak responsivity of 0.16 mA/W at 4 μm under room temperature operation.