In our previous work, TFBs with high-temperature tolerance was fabricated by all sputtering; Pt/Ti as cathode current collector, 3μm-thick-LiCoO2 with post-annealed at around 600 deg.C as cathode, 2 μm-thick-LiPON as solid electrolyte, 600 nm-thick-Si1-xTix (x=0, 0.03, and 0.12) as anode, and Ni as anode current collector [4], and finally completed by encapsulation with UV curable resin and inorganic lid. The active area of fabricated TFBs was 1.4 mm2. Ti which is inactive material against Li, was used as dopant for not only mitigating mechanical stress but also decreasing resistivity. Cycling was performed between 2.5 and 4.1 V with standard current rate condition, and cycle performance resulted well during 100 cycles. In this work, microstructure of Si-Ti alloy film was adjusted by changing sputtering condition such as process pressure and gas species. Figure 1 shows cross-sectional SEM image of each Si1-xTix films. The effect of Si1-xTix anode microstructure on electrochemical and cycle performance of full cell will be discussed.
References
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[3] T. Kuriyama, A. Suzuki, Y. Okamoto, I. Kimura, Y. Morikawa, and Y. Mita, A micromachined all-solid on-chip thin-film battery towards uninterruptible photovoltaic cells, 2018 Symposium on Design, Test, Integration and Packaging of MEMS and MOEMS (DTIP), 153-156 (2018).
[4] A. Suzuki, S. Sasaki, and T. Jimbo, Development of All-solid-state Thin-film Secondary Battery for MEMS and IoT Device, The 18th International Conference on PowerMEMS 2018, Proceedings, T5A-03 (2018).
