This talk focuses on surface preparation and Al plating processes to promote strong adhesion and low contact resistance between plated Al and cell emitter. Sheet resistance and surface morphology of the emitter were monitored as a function of laser power for SiNx removal. Electrochemical capacitance-voltage profiling determined the laser power at which the emitter surface dopant profiles were preserved. A process to remove laser damage and clean the Si surface after laser patterning was developed by etching Si in 1 wt% NaOH. It was found by atomic force microscopy that ~23 s was the minimum time to completely remove the original Si surface which was damaged and contaminated. Al deposits on substrates prepared by this surface cleaning process showed strong adherence in the Scotch tape test. Al plating was performed at different temperatures. The resulting film thickness and morphology were investigated with scanning electron microscopy. The lowest film resistivity was less than 8 µΩ-cm which was obtained at a plating temperature of 50°C and showed a grain size of 2–5 µm.
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