A LLZT plate (Toshima Manufacturing Co. Ltd.) with a thickness of 0.5 mm was used as the electrolyte1. A Cu current collector (CC) film was deposited on one side of a LLZT plate by pulsed laser deposition (PLD). A Li film with a thickness of 3 μm and a diameter of 9.0 mm was deposited on the other side of the LLZT plate as the counter electrode by vacuum evaporation. A fabricated Cu/LLZT/Li cell was sandwiched between Cu and brass plates. The Cu plate has a view port in the center. The cell was transferred into the SEM camber without exposure to the air. Li plating/stripping was conducted under galvanostatic conditions at room temperature during the SEM observation.
Figure 1shows the voltage transient during Li plating at 100 uA cm−2 on Cu-coated LLZT. Li does not only nucleate at grain boundaries but also on grain cores. After 450 seconds, the voltage drops to 0 V indicating the occurrence of short-circuiting. This result indicates that only a small number of the nucleation sites exist on LLZT surfaces whereby the local current density is supposed to increase. We will also discuss the detail of short-circuiting mechanism of LLZT.
Acknowledgement
The authors gratefully acknowledge JSPS 17H04894 for the financial supports
References
[1] Motoyama et al., J. Electrochem. Soc.,162, A7067 (2015).
[2] Yonemoto et al., J. Power Sources, 343, 207 (2017).
