Heterogenous integration of III-V compound semiconductors with Si circuitry is an enabling technology for applications including high-bandwidth communications [1], focal plane arrays [2] and concentrating solar cells [3, 4]. Typical integration schemes include low temperature flip-chip bonding using indium bump bonds along with epoxy underfill and may include the integration of micro-optics for collimation and focusing.

In this talk, I will discuss previous and ongoing compound semiconductor heterogenous integration efforts at Sandia National Laboratories and the challenges involved in forming high-yield devices. Specific programs to be discussed include the ARPA-E MOSAIC solar concentrator (Fig. 1), infrared focal plan arrays (Fig. 2), and the recently-awarded DARPA PIPES ultra-low-energy-per-bit photonic transceiver.

References

1. Ciftcioglu, et al, “3-D integrated heterogenous intra-chip free-space optical interconnect,” Opt. Express, vol. 20 2012.
2. W. Peters, et al., “Resonant ultrathin infrared detectors enabling high quantum efficiency,” IEEE RAPID, 2018.
3. Li, et al., “Wafer integrated micro-scale concentrating photovoltaics,” Prog. Photovoltaics, vol. 26, 2018.
4. H. Jared, et al., “Integration of wafer-level solar cells and micro-optic concentrators for micro-scale concentrating photovoltaics,” ASPE Annual Meeting, 2017.

Acknowledgment

This work was supported in part by the Laboratory Directed Research and Development program at Sandia National Laboratories. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA-0003525. This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government.