Earth-Abundant Semiconductors Based Electric Power Window

Wednesday, 16 October 2019: 14:40
Room 224 (The Hilton Atlanta)
M. Patel, D. K. Ban, T. T. Nguyen, and J. Kim (Incheon National University)
Earth-abundant semiconductors and scalable fabrication of the photovoltaic device are the cornerstones to realize the net-zero emission energy-eco system. Metal oxides have a high energy bandgap and pass light to the vision to enlighten the vision to the human eyes. This study demonstrates all-transparent photovoltaic framework by various heterostructures, for example, ZnO/NiO and TiO2/Co3O4. The large area (> 1-inch square) sputtering grown these heterostructures exhibits high power conversion efficiency with outstanding stability under the UV light portion of Sunlight, and visible light transmittance more than 50%. This study revealed the high-work-function of p-type metal oxide played a vital role to achieve photovoltage >0.7 V under low-intensity light illumination. We studied the various aspect that includes the effect of metal work-function, transient optoelectronics, and back surface field. The optoelectronic performances of these heterostructures demonstrate their potential in the ultraviolet photodetector, transparent solar cells, and transparent electronics.