Investigation of Interfacial Charge Transfer Doping of 2D MoS2

Wednesday, 16 October 2019: 09:00
Room 212 (The Hilton Atlanta)
S. I. Khondaker and B. Chamlagain (University of Central Florida)
Layered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) have attracted a great deal of attention because of their exciting electrical and optical properties and their potential applications in electronic and optoelectronic devices. Because of ultra low volume and chemically inert surface of 2D materials, it is challenging to achieve controlled doping of 2D materials. Recently, interfacial charge transfer induced doping of 2D materials have gained significant attention. In this talk, I will present electrical transport studies of 2D molybdenum disulfide (MoS2) field effect transistors decorated with zero dimensional (0D) gold (Au) nanoislands. I will discuss how the Au nanoisland coverage affects the interfacial charge transfer based doping and tailor the electrical properties of the host material. From the detailed low temperature electron transport measurements, I will elucidate the role of 2D-0D interface on the transport properties of MoS2 FETs.