H01 - Wide Bandgap Optoelectronic Devices

Monday, 14 October 2019: 13:30-16:20
Room 213 (The Hilton Atlanta)
Chairs:
Jennifer K. Hite and Travis J. Anderson
13:30
(Invited) Controlling Light with Phonons in Polar Semiconductors: Novel Approaches to Infrared Nanophotonics
J. D. Caldwell (Vanderbilt University)
14:00
(Invited) Development of Ultraviolet Vertical-Cavity Surface-Emitting Light Sources
R. D. Dupuis, T. Detchphrom, C. W. Tsou, Y. Park, H. Jeong, K. Mehta, P. Chen, P. D. Yoder, and S. C. Shen (Georgia Institute of Technology)
14:30
(Invited) Recent Advances in III-Nitride Devices Using Ultrawide Bandgap AlxGa1-Xn Active Layers
A. Khan (University of South Carolina)
15:00
Break
15:30
(Invited) Ultra-Wide Bandgap Photodetection Concepts
M. Chandrashekhar (University of South Carolina)
16:00
Selective Annealing Effects of Asymmetric Schottky-Type AlGaN Metal-Semiconductor-Metal UV-B Sensor
J. H. Seol, B. J. Park, and S. H. Hahm (Kyungpook National University, South Korea)
See more of: H01: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 62)
See more of: Electronic and Photonic Devices and Systems
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