D01 - Memory Devices

Monday, 14 October 2019: 15:10-16:50
Room 208 (The Hilton Atlanta)
Chairs:
Durgamadhab Misra and Kuniyuki Kakushima
15:10
Design Principles of Dielectric Layers for High Density Flash Memories
S. J. Baik (Hankyong National University)
15:30
Effect of Schottky Contact Emitter on Electrical Characteristics in 2-Terminal Vertical Thyristor Based Capacitorless Memory
M. W. Kim (Hanyang University), B. Lee (SK hynix Inc.), J. H. Kim, G. J. Oh, C. W. Ahn, S. D. Yoo, T. H. Shim, E. K. Kim, and J. G. Park (Hanyang University)
15:50
Dependency of Multi-Level-Cell Behavior on Thickness of Top MgO Tunneling Barrier in Double Pinned Structure Perpendicular Spin-Torque-Transfer Magnetic Random Access Memory
H. S. Jun, M. Park (Hanyang Universitiy), S. Jung (Hanyang Universitiy, Hanyang University), J. Y. Choi (Hanyang University), K. Ashiba (Hanyang Universitiy), J. U. Baek (Hanyang University), T. H. Shim (Hanyang Universitiy), and J. G. Park (Hanyang University)
16:10
Phase Change Materials for Non-Volatile Memories : Properties and Optimization through Ab Initio Simulation
J. Y. Raty (University of Liège, FRS-FNRS)
See more of: D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 17
See more of: Dielectric Science and Materials
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