D01 - Dielectrics and Processing

Tuesday, 15 October 2019: 10:10-11:50
Room 208 (The Hilton Atlanta)
Chairs:
Eddy Roger Simoen and Durgamadhab Misra
10:10
(Invited) Challenges and Opportunities for High-K Dielectrics for Advanced Technology Nodes
K. Tapily, R. D. Clark, S. Consiglio, H. Niimi, D. Triyoso, C. S. Wajda, and G. J. Leusink (TEL Technology Center, America, LLC)
10:50
Study on the Effects of Post-Deposition Annealing on SiO2/β-Ga2O3 Mos Characteristics
K. Kita, E. Suzuki, and Q. Mao (The University of Tokyo)
11:10
Non-Aqueous Electrodeposition of 2-D Layered MoS2 from a Tailored Single Source Precursor
S. Thomas, P. N. Bartlett, A. L. Hector, G. Reid, W. Levason, D. E. Smith, V. K. Greenacre, and C. H. de Groot (University of Southampton)
11:30
Monitoring of High Selectivity Chemistry for Si3N4 Etch
C. Bai, G. Liang, P. Okagbare, and E. Shalyt (ECI Technology)