H03 - General Wide Bandgap Technologies

Tuesday, 15 October 2019: 13:30-15:50
Room 213 (The Hilton Atlanta)
Chairs:
Michael Dudley and Noboru Ohtani
13:30
(Invited) A New Analysis of the Dependence of Critical Electric Field on Semiconductor Bandgap
R. J. Kaplar, O. Slobodyan, J. D. Flicker (Sandia National Laboratories), and M. A. Hollis (MIT Lincoln Laboratory)
14:10
(Invited) Emerging Role of Silicon Carbide and Gallium Nitride Based Power Electronics in Power and Transportation Sectors
P. Paniyil (Clemson University) and R. Singh (Center for Silicon Nanoelectronics)
14:50
(Invited) Comparison of High Voltage, Vertical Geometry Ga2O3 Rectifiers with GaN and SiC
J. Yang, C. Fares, P. H. Carey IV, F. Ren (University of Florida), M. J. Tadjer (U.S. Naval Research Laboratory), Y. T. Chen (National Chiao Tung University), M. Xian (University of Florida), Y. T. Liao (National Chiao Tung University), C. W. Chang, J. Lin, R. Sharma, M. E. Law (University of Florida), P. E. Raad (Southern Methodist University), P. L. Komarov (TMX Scientific, Inc.), D. J. Smith (Arizona State University Department of Physics), A. Kuramata (Tamura Corporation and Novel Crystal Technology), and S. J. Pearton (University of Florida)
15:30
Optimization of Doping Profiles in Insulated-Gate Bipolar-Transistors Using a Large Scale Optimization Technique
C. Zhu (Florida State University) and P. Andrei (Florida A&M University and Florida State University)
See more of: H03: Gallium Nitride and Silicon Carbide Power Technologies 9
See more of: Electronic and Photonic Devices and Systems
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