H03 - SiC Technologies

Wednesday, 16 October 2019: 14:00-16:00
Room 213 (The Hilton Atlanta)
Chairs:
Rafael Dalmau and Michael Dudley
14:00
(Invited) Recent Progress in 4H-SiC CVD Growth for High-Voltage Power Devices
H. Tsuchida, I. Kamata, N. Hoshino, K. Murata, and T. Miyazawa (Central Research Institute of Electric Power Industry)
14:40
(Invited) Unified Understanding of Formation of Shockley Stacking Faults in 4H-SiC Crystals Under Thermal Equilibrium and Non-Thermal Equilibrium Conditions Based on the Quantum Well Action Concept
N. Ohtani (Kwansei Gakuin University)
15:20
(Invited) Development of SiC Schottky-PN Diode with Low on Resistance and High Blocking Voltage
K. Kojima and H. Okumura (ADPERC, AIST)
See more of: H03: Gallium Nitride and Silicon Carbide Power Technologies 9
See more of: Electronic and Photonic Devices and Systems
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