H03 - GaN Technologies

Wednesday, 16 October 2019: 08:00-12:20
Room 213 (The Hilton Atlanta)
Chairs:
Albert G. Baca and Lisa M. Porter
08:00
(Invited) Selective Area Growth of p-Type GaN for Gallium Nitride Power Switching Transistors
A. A. Allerman, A. M. Armstrong, G. W. Pickrell, M. H. Crawford, A. A. Talin, F. Léonard, K. C. Ceilo (Sandia National Laboratories), D. Feezell, A. Aragon (University of New Mexico), and R. J. Kaplar (Sandia National Laboratories)
08:40
(Invited) Advances in Ion Implantation of GaN and AlN
R. Collazo, M. H. Breckenridge, A. Klump, Y. Guan, Q. Guo, J. Kim, S. Washiyama, B. Sarkar, P. Reddy (North Carolina State University), R. Kirste (Adroit Materials Inc.), W. Mecouch (Adroit Materials, Inc.), S. Mita, J. Tweedie (Adroit Materials Inc.), M. Bockowski (Institute of High Pressure Physics PAS), and Z. Sitar (North Carolina State University)
09:20
Recent Progress of GaN-Based Vertical Devices
K. Nomoto, Z. Hu, W. Li, M. Zhu, K. Lee, D. Jena, and H. G. Xing (Cornell University)
09:40
Break
10:00
(Invited) Effects of Annealing Capped (0001) Oriented GaN Samples
K. A. Jones (Army Research Lab)
10:40
(Invited) Performance Evaluation of III-N Bipolar Switches Grown on GaN Substrates
S. C. Shen, C. W. Tsou, M. H. Ji, M. Noodeh (Georgia Institute of Technology), E. Letts, D. Key, T. Hashimoto (SixPoint Materials, Inc.), T. Detchphrom, and R. D. Dupuis (Georgia Institute of Technology)
11:20
(Invited) Basic Ammonothermal Growth of Bulk GaN Single Crystal Using Sodium Mineralizers
Y. K. Lee (Korea Research Institute of Chemical Technology)
12:00
Radiation-Induced DC Parametric Degradation of Enhancement Mode GaN-on-(111)Silicon High-Electron-Mobility Transistors
Y. Lu and A. Christou (University of Maryland)
See more of: H03: Gallium Nitride and Silicon Carbide Power Technologies 9
See more of: Electronic and Photonic Devices and Systems
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