H03 - Gallium Oxide Technologies

Wednesday, 16 October 2019: 16:00-18:00
Room 213 (The Hilton Atlanta)
Chairs:
Kenneth A. Jones and Aris Christou
16:00
(Invited) MOCVD-Grown Ga2O3 Field Effect Transistors on Sapphire
M. Razeghi, J. H. Park, and R. McClintock (Northwestern University)
16:40
(Invited) Ohmic and Schottky Contact Formation to Gallium Oxide, an Ultra-Wide Bandgap Semiconductor
L. M. Porter, Y. Yao, L. A. M. Lyle, K. Jiang, E. Favela, D. Moody (Carnegie Mellon University), K. K. Das (N.C. State University), A. Popp, and G. Wagner (IKZ, Berlin)
17:20
Field Plating for Improved Ga2O3 Schottky Rectifier Performance
P. H. Carey IV, J. Yang, R. Sharma, F. Ren, S. J. Pearton, and M. E. Law (University of Florida)
17:40
Band Offsets of Insulating and Semiconducting Oxides on (AlxGa1-x)2O3
C. Fares, F. Ren (University of Florida), M. J. Tadjer (Naval Research Laboratory), H. von Wenckstern, M. Kneiss (Universität Leipzig), D. Hays, B. P. Gila, and S. J. Pearton (University of Florida)
See more of: H03: Gallium Nitride and Silicon Carbide Power Technologies 9
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