H03 - Characterization

Thursday, 17 October 2019: 13:30-16:10
Room 213 (The Hilton Atlanta)
Chairs:
Roberta Nipoti and Hrishikesh Das
13:30
(Invited) Defects and Development of High Power Vertical GaN Based Structures
M. S. Goorsky (University of California Los Angeles), T. Bai (UCLA), M. Liao, Y. S. Wang (University of California, Los Angeles), K. Huynh, and P. H. M. Yu (UCLA)
14:10
Analysis of Basal Plane Dislocation Dynamics in PVT-Grown 4H-SiC Crystals during High Temperature Treatment
B. Raghothamachar (Stony Brook University), Y. Yang (CVD Equipment Corporation), J. Guo (Applied Materials, Inc.), and M. Dudley (Stony Brook University)
14:30
Radiation Effects in Diamond p-Field Effect Transistors
A. Thapa, D. Shahin, and A. Christou (University of Maryland)
14:50
Break
15:10
(Invited) X-Ray Metrology of AlN Single Crystal Substrates
R. Dalmau, J. Britt, B. Moody, and R. Schlesser (HexaTech, Inc.)
15:50
Relationship between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals
T. Ailihumaer, H. Peng, B. Raghothamachar, and M. Dudley (Stony Brook University)
See more of: H03: Gallium Nitride and Silicon Carbide Power Technologies 9
See more of: Electronic and Photonic Devices and Systems
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