H03 - Reliability Issues

Tuesday, 15 October 2019: 16:00-18:00
Room 213 (The Hilton Atlanta)
Chairs:
Robert J. Kaplar and Hrishikesh Das
16:00
(Invited) Selected Issues for SiC Mosfet Reliability
R. Green, D. Habersat, and A. Lelis (U.S. Army Research Laboratory)
16:40
(Invited) Reliability Considerations for Al-Rich Aluminum Gallium Nitride Power Switching Transistors
A. G. Baca, B. Klein, C. A. Stephenson, A. M. Armstrong, A. A. Allerman, E. A. Douglas, T. R. Fortune, and A. Colon (Sandia National Laboratories)
17:20
(Invited) Ag Sinter Joining Technology for Different Metal Interface (Au, Ag, Ni, Cu, Al) in Wide Band Gap Power Modules
K. Suganuma (Osaka university) and C. Chen (Osaka University)
See more of: H03: Gallium Nitride and Silicon Carbide Power Technologies 9
See more of: Electronic and Photonic Devices and Systems
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