H03 - Epitaxial Technologies

Thursday, 17 October 2019: 08:30-11:30
Room 213 (The Hilton Atlanta)
Chairs:
Hidekazu Tsuchida and Andrew A. Allerman
08:30
(Invited) Post Implantation Annealing of P+ and Al+ Ion Implanted SiC at Relatively Low Temperatures and for Long Times"
R. Nipoti (CNR-IMM, Bologna, Italy) and A. Parisini (SMFI, Università di Parma, Italy)
09:10
(Invited) Influence of Wafering, CMP and Subsurface Damage on Epitaxial Defects and Surface Quality in SiC
H. Das, S. Sunkari, and J. Justice (ON Semiconductor)
09:50
Break
10:10
(Invited) Nanostructures and Crystal Defects in Thick GaN Epitaxial Layers for Power Electronic Switches
A. Christou (University of Maryland)
10:50
High-Quality GaN Films Grown on AlN/Sapphires for Power Electronic Device Applications
X. Feng and Y. Yun (Guangdong University of Technology)
11:10
Growth of AlGaN on GaN/AlN/Sapphire Substrates for Power Electronic Application
K. Bun (University of Cambodia)
See more of: H03: Gallium Nitride and Silicon Carbide Power Technologies 9
See more of: Electronic and Photonic Devices and Systems
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