1625
Large Non-Classical Electrostriction in Aliovalent and Isovalent Doped Ceria

Monday, 30 May 2022: 11:00
West Meeting Room 215 (Vancouver Convention Center)
M. Varenik, E. Wachtel, D. Ehre, E. Gaver, and I. Lubomirsky (Weizmann Institute of Science)
The majority of commonly used electrostrictive ceramics are based on lead manganese niobate. These ceramics display large electrostriction strain coefficients ≈ 10-16 m2/V2 at frequencies up to a few kHz. However, they suffer from major drawbacks: they require high driving currents (dielectric constant >10000), contain toxic elements, and are incompatible with thin film Si-microfabrication techniques.

We have recently reported that ceria ceramics doped with aliovalent cations having crystal radii smaller than that of cerium, display increased high frequency (f >100Hz) longitudinal electrostriction strain coefficients |M|. For instance, with 10 mol% Lu3+ or Yb3+ lanthanide dopants, |M| ~ 10-17 m2/V2 is observed for f >100Hz . Despite Yceria ~200GPa and eceria ~ , these electrostriction strain coefficients are 100-fold larger than estimated on the basis of Newnham’s scaling law for “classical” electrostrictors. Such “non-classical” behavior has been attributed to the formation of highly polarizable, elastic dipoles reorienting under external electric field.

Surprisingly, doping with small isovalent dopants, such as Zr and Hf , produces an increase in |M| to , independent of frequency up to several kHz, as determined by converse electrostriction measurements. The introduction of Zr raises the dielectric constant more than predicted by the Clausius-Mossotti relation. This suggests that the presence of a small dopant creates a highly polarizable unit which may be responsible for the large electrostriction strain coefficient. Our results demonstrate that, by systematically adjusting the composition of ceria-based solid solutions, the possibility exists for development of technologically useful electrostrictive materials which are, at the same time, ecologically sound and fully compatible with Si-microfabrication.