Hexagonal boron nitride (h-BN) is the insulator of the family of two dimensional (2D) materials. It is a very important material as it find various applications in optoelectronics devices, sensors, tunneling junctions, graphene and other 2D FETs owing to its large electronic as well as optical band gap, atomically flat surface, high surface polar phonon density and suitable dielectric characteristics. Growth of h-BN has been reported on various metallic substrates such as Cu, Ni, Ru, Fe, etc. but owing to its inherent low solubilities of B and N species it is considered as a good candidate for large area growth of h-BN. Also, different facets of Cu surface have been reported to have different degree of van der Waals interactions with h-BN layer as a result of plane to plane registry. In 2D materials, epitaxial growth has been characterized as van der Waals stacking due to presence of heterointerfaces which are primarily not affected by the lattice mismatch strain between different crystallographic planes due to insignificant out of plane interaction energies. Thus, the concepts of three modes of growth namely Volmer-Weber (VW), Frank van der Merwe (FdM) and Stranski Krastanov (SK) solely based on thermodynamic factors such as surface energies are nullified. Even then, evidence of such modes of growth can be seen which is due to a combination of thermodynamic and kinetic factors which occur during the growth of such layered materials. We report growth of h-BN on Cu via chemical vapor deposition resulting in islands (I), layers (L) and islands plus layers (I+L) in a controlled manner. By controlling the supersaturation and by operating in the near equilibrium limit we observe growth to occur in layered mode resulting in large single crystal grains which coalesce to form flat layers of h-BN. With varying supersaturation at a value far away from the equilibrium limit outcomes to island growth. This is attributed to the higher local supersaturation at a nucleation site which results in growth happening in reaction limited regime thus favoring island growth. By altering the growth kinetics at the surface by increasing the precursor flux and thus increasing local supersaturation at elevated growth temperature we observe large single crystal grains forming which form the first few h-BN layers. With increase in layer thickness the dependence on the binding energy of Cu substrate which acts as the catalyst and the borazane precursor is insignificant, this results in subsequent nucleation on the few layer hBN surface resulting in formation of small islands. This is attributed to decreased surface diffusion as the growth happens in reaction limited regime due to high precursor flux. This suggests growth mode similar to Stranski-Krastanov growth owing to kinetic factors, where island growth becomes favorable to layer-by-layer growth after the first few layers due to a decrease in film substrate binding energy with increasing thickness. We observe such growth over large areas resulting in layer control from monolayer to few layers and island sizes as big as 50 um. This work also establishes that the reactivity of borazane can be modified by altering the physico-chemical chemistry. Thus, we report mode dependent controlled large area deposition of h-BN which would help exploit its properties in various application and help advance large scale manufacturing of 2D materials.