The most common approach for establishing electrical contacts to 2D semiconductors, such as MoS₂, is by fabricating metal contacts on top of the inert crystal surface. From an electron transport perspective, these top-contact interfaces can be awkward, with a van der Waals gap or some difficult-to-control form of interfacial bonding. Pure edge contacts (where the interface between the metal and 2D semiconductor occurs completely along the open bonds of the 2D crystal edge) provide a more natural bonding structure and potentially better carrier transport behavior; however, edge contacts have proven more difficult to realize. In this talk, recent success with establishing clean, pure edge contacts between metals and 2D semiconductors will be discussed, including an approach involving an in situ ion beam within a thin-film deposition system. Evaluation of these edge contacts compared to other approaches will be provided, along with demonstration of how edge-contact scaling affects the performance of 2D transistors compared to top-contact scaling. While there remains much to be learned about these interesting metal-2D edge interfaces, results thus far show significant promise for yielding a more scalable and potentially reproducible contact for 2D-based devices.