Transition metal nitride (TMN) thin films have been considered important electrode material to be used in energy storage based on their incomparable properties such as higher conductivity than oxides, hardness, inertness and catalytic or electrochemical activity. Nano-crystalline nitrides and their thin film based electrodes are used in supercapacitor for excellent electrochemical performance. Herein, we have deposited high quality thin films of transition metal nitride in controlled vacuum by using reactive dc- magnetron sputtering. Magnetron sputtering is a process that provides an extremely efficient and highly flexible way of building coating architectures with varying degrees of complexity. In this work, we prepared highly crystalline and uniform thin films with good adhesion on flexible and conducting substrate (SS-304) in Ar-N₂ atmosphere. Field Emission Scanning Electron Microscopy (FE-SEM) revealed the film thickness and morphology of the films, while composition was confirm by the EDAX attached with FE-SEM. Surface topography and roughness was confirmed by Atomic Force Microscopy (AFM), while Cyclic Voltammetry (CV) was used to study surface electrochemical activity of the thin films. Crystal structure, phase orientation and elemental composition was confirmed by XPS (X-ray photoelectron spectroscopy) and XRD (X-ray diffraction). This study shows various aspects of TMN thin films based on their physio-chemical properties. Further, for practical demonstration developed electrodes were tasted in bending state to be used in flexible energy storage devices.